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| Advance Product Information July 14, 2005 X-Band Low Noise Amplifier Key Features * * * * * * TGA2511 Typical Frequency Range: 6 - 14 GHz 1.3 dB Nominal Noise Figure 20 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 80 mA Self Bias 0.15 um 3MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in) Product Description The TriQuint TGA2511 is a wideband LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications. Offering high gain 20dB typical from 6-14GHz, the TGA2511provides excellent noise performance with typical midband NF 1.3dB, while the balanced topology offers good return loss typically 15dB. The TGA2511 is designed for maximum ease of use. The large input FETs can handle up to 21dBm input power reliably. The part is also assembled in self-biased mode, using a single +5V supply connection from either side of the chip, or in gate biased mode, allowing the user to control the current for a particular applications. In self-biased mode the TGA2511 offers 6dBm typical P1dB, while in gate-biased mode the typical P1dB is over 12dBm. The small size of 2.46mm2 allows ease of compaction into MultiChip-Modules (MCMs). The TGA2511 is 100% DC and RF tested onwafer to ensure performance compliance. Lead-Free & RoHS compliant. Primary Applications * * * X-Band Radar EW, ECM Point-to-Point Radio Measured Fixtured Data Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA 30 GAIN S-Parameter (dB) 20 10 0 -10 -20 -30 4 6 8 10 12 14 16 18 Frequency (GHz) IRL ORL 5 Noise Figure (dB) 4 3 2 1 0 4 6 8 10 12 14 16 18 Frequency (GHz) Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ Drain Voltage Gate Voltage Range Drain Current (gate biased) Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE [3.5 + (0.0125)(Id)] V -1 TO +0.5 V 240 mA 14 mA 21 dBm See note 5/ 117 0C 320 C -65 to 150 0C 0 NOTES 2/ 3/ 2/ 4/ 4/ 2/ 6/ 7/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Unit for Id is A Total current for the entire MMIC. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (117 0C - TBASE 0C) / TJC (0C/W) Where TBASE is the base plate temperature, TJC is on Table IV. 6/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possibl levels. These ratings apply to each individual FET. 7/ TABLE II DC PROBE TESTS (Ta = 25 0C, Nominal) SYMBOL VBVGS, Q1 VP, Q1,2,5,6 PARAMETER Breakdown Voltage GateSource Pinch-Off Voltage MIN. -30 -0.7 TYP. MAX. -5 -0.1 UNITS V V Q1, Q2, Q5, Q6 are 400 um FET. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Noise Figure, NF Output Power @ 1dB Gain Compression, P1dB OIP3 Gate Bias 6 - 14 5.0 160 -0.1 20 18 18 1.3 12 24 Self Bias 6 - 14 5.0 80 17 18 18 1.4 6 15 UNITS GHz V mA V dB dB dB dB dBm dBm TABLE IV THERMAL INFORMATION PARAMETER TEST CONDITIONS Vd = 5 V Id = 160 mA Gate Bias Pdiss = 0.80 W Vd = 5 V Id = 80 mA Self Bias Pdiss = 0.40 W TCH (OC) 103.9 TJC (qC/W) 42.4 TM (HRS) 3.8E+6 TJC Thermal Resistance (channel to Case) TJC Thermal Resistance (channel to Case) 82.7 31.7 4.1E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70oC baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Measured Fixtured Data Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 16 18 Frequency (GHz) Gain (dB) 5.0 4.5 4.0 Noise Figure (dB) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 4 6 8 10 12 14 16 18 Frequency (GHz) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Measured Fixtured Data Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA 0 -5 Input Return Loss (dB) -10 -15 -20 -25 -30 -35 4 6 8 10 12 14 16 18 Frequency (GHz) 0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 -35 4 6 8 10 12 14 16 18 Frequency (GHz) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Measured Fixtured Data Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA 16 14 12 P1dB (dBm) 10 8 6 4 2 0 4 5 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) 28 26 24 OIP3 (dBm) 22 20 18 16 14 12 10 8 4 5 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Measured Fixtured Data Bias Conditions: Self Bias Vd = 5 V, Id = 80 mA 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 16 18 Frequency (GHz) Gain (dB) 5.0 4.5 Noise Figure (dB) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 2 4 6 8 10 12 14 16 18 Frequency (GHz) 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Measured Fixtured Data 5 0 Input Return Loss (dB) -5 -10 -15 -20 -25 -30 -35 4 5 0 Output Return Loss (dB) -5 -10 -15 -20 -25 -30 -35 4 6 8 10 12 14 16 18 Frequency (GHz) Bias Conditions: Self Bias Vd = 5 V, Id = 80 mA 6 8 10 12 14 16 18 Frequency (GHz) 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Measured Fixtured Data Bias Conditions: Self Bias Vd = 5 V, Id = 80 mA 16 14 12 P1dB (dBm) 10 8 6 4 2 0 4 5 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) 28 26 24 22 OIP3 (dBm) 20 18 16 14 12 10 8 4 5 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Mechanical Drawing 0.783 (0.031) 1.200 (0.047) 1.105 (0.044) 1.035 (0.041) 1.246 (0.049) 1.487 (0.059) 1.897 1.955 (0.075) (0.077) 2 3 4 5 6 RC B R C B 0.600 (0.024) 1 7 0.600 (0.024) 12 0 11 10 9 8 0.095 (0004) 0 0.095 (0.004) 0.783 (0.031) 1.035 (0.041) 1.246 (0.049) 1.487 (0.059) 1.817 (0.072) 2.050 (0.081) Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND is back side of MMIC Bond pad #1 Bond pad #2, 3, 12, 11 Bond pad #4, 10 Bond pad #5, 9 Bond pad #6, 8 Bond pad #7 (RF In) (Vs) (Vg) (Vctrl) (Vd) (RF Out) 0.100 x 0.200 (0.004 x 0.008) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.200 (0.004 x 0.008) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Recommended Chip Assembly Diagram Option 1: Self Bias - No Gain Control Vd 100pF RF In RF Out All DC connections may be brought in from either side of the chip (Use Pad 6 or 8) 0.01uF external Cap is recommended on Drain Bias: Vd = 5V (Id = ~80mA) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Recommended Chip Assembly Diagram (Con't) Option 2: Self Bias - With Gain Control Vctrl Vd 100pF 100pF RF In RF Out All DC connections may be brought in from either side of the chip (Use Pad 5 or 9, and Pad 6 or 8) 0.01uF external Caps are recommended on Drain line Bias: Vd = 5V (Id = ~80mA), Vctrl = 0 to +5V for Gain adjustment 12 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Recommended Chip Assembly Diagram (Con't) Option 3: Gate Bias - With Gain Control Vg Vctrl Vd 100pF 100pF 100pF RF In RF Out All DC connections may be brought in from either side of the chip (Use Pad 4 or 10, Pad 5 or 9, and Pad 6 or 8) 0.01uF external Caps are recommended on Drain, Gate line, 10 ohm external series R between 100pF cap and 0.01uF cap is recommended for Gate line Source connections (Pad 2, 3, 11, 12) are bonded to ground Bias: Vd = 5V , Vctrl = 0 to +5V for Gain adjustment Vg = Range, -0.5 to 0, typically ~ -0.1 will provide ~160mA of Id. 13 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 14, 2005 TGA2511 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. 0 Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 14 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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